Bias circuit optimization design of power amplifier based on Volterra series

CHAI Renlei; XIAO Manlin; CAI Liyuan

doi:10.12299/jsues.22-0136

Volume 36 Issue 4

Dec. 2022

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CHAI Renlei, XIAO Manlin, CAI Liyuan. Bias circuit optimization design of power amplifier based on Volterra series[J]. Journal of Shanghai University of Engineering Science, 2022, 36(4): 378-382. doi: 10.12299/jsues.22-0136

Citation:

CHAI Renlei, XIAO Manlin, CAI Liyuan. Bias circuit optimization design of power amplifier based on Volterra series[J]. Journal of Shanghai University of Engineering Science, 2022, 36(4): 378-382. doi: 10.12299/jsues.22-0136

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Bias circuit optimization design of power amplifier based on Volterra series

doi: 10.12299/jsues.22-0136

School of Urban Railway Transportation, Shanghai University of Engineering Science, Shanghai 201620, China

Received Date: 2022-05-08
Publish Date: 2022-12-30

Abstract

Abstract

Based on the Volterra series, a hybrid Π type equivalent circuit was used to model the common-emitter amplification circuit according to the characteristics of the Class AB power amplifier. The nonlinear components in the amplifier were described and analyzed to obtain a model of the system behavior of the amplifier circuit. An optimized design method was proposed based on Volterra series and Kirchhoff's current law (KCL) to find the optimal bias parameters quickly. A RF amplifier operating at 850 MHz was designed and the optimal input bias size for operation taking into account both the efficiency and linearity of the amplifier was calculated to be 6 ohms, and the output P1dB was 23.4dBm (the reference power is 1 mW). Multisim circuit simulation proves the results of the theoretical analysis.
- common-emitter amplification circuit,
- Volterra series,
- behavioral model,
- bias circuit,
- circuit simulation.

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References(15)

References

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